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| Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1555 HEXFET(R) POWER MOSFET 1000 Volt, 3.5 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. IRFNG40 N-CHANNEL Product Summary Part Number IRFNG40 BVDSS 1000V RDS(on) 3.5 ID 3.9A Features: s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C I D @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight IRFNG40 3.9 2.5 15.6 125 1.0 20 530 3.9 12.5 1.0 -55 to 150 300 (for 5 seconds) 2.6 (typical) Units A W W/K V mJ A mJ V/ns oC g To Order Previous Datasheet IRFNG40 Device Index Next Data Sheet Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. 1000 -- -- -- 2.0 3.3 -- -- -- -- 51 5.4 29 -- -- -- -- -- Typ. Max. Units -- 1.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.0 -- -- 3.5 4.2 4.0 -- 25 250 100 -100 120 12 66 30 50 170 50 -- V V/C V S( ) A nA nC Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25C, ID = 1.0 mA VGS = 10V, ID = 2.5A VGS = 10V, ID = 3.9A VDS = VGS, ID = 250A VDS > 15V, IDS = 2.5A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 3.9A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 500V, ID = 3.9A, RG = 9.1, VGS = 10V see figure 10 Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ns LS Internal Source Inductance -- 6.5 -- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1700 250 100 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0 MHz see figure 5 Source-Drain Diode Ratings and Characteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- -- -- 3.9 15.6 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Tj = 25C, IS = 3.9A, VGS = 0V Tj = 25C, IF = 3.9A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. -- -- -- -- -- -- 1.8 1000 5.6 V ns C Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min. Typ. Max. Units -- -- -- TBD 1.0 -- K/W Test Conditions Soldered to a copper clad PC board To Order Previous Datasheet IRFNG40 Device Index Next Data Sheet Fig. 1 -- Typical Output Characteristics TC = 25C Fig. 2 -- Typical Output Characteristics TC = 150C ID = 3.9A Fig. 3 -- Typical Transfer Characteristics Fig. 4 -- Normalized On-Resistance Vs.Temperature I D = 3.9A Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet IRFNG40 Device Index Next Data Sheet 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10 10us 100us 1 1ms 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 10ms 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage Fig. 8 -- Maximum Safe Operating Area Fig. 9 -- Maximum Drain Current Vs. Case Temperature Fig. 10a -- Switching Time Test Circuit Fig. 10b -- Switching Time Waveforms To Order Previous Datasheet IRFNG40 Device 10 Index Next Data Sheet Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t2 2. Peak T = PDM x Z thJC + TC J 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a -- Unclamped Inductive Test Circuit Fig. 12b -- Unclamped Inductive Waveforms Fig. 12c -- Max. Avalanche Energy vs. Current Fig. 13a -- Gate Charge Test Circuit To Order Previous Datasheet IRFNG40 Device Index Next Data Sheet Repetitive Rating; Pulse width limited by maximum junction temperature. (see figure 11) @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 3.9A, VGS = 10V, 25 RG 200 ISD 3.9A, di/dt 100A/s, VDD BV DSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C Fig. 13b -- Basic Gate Charge Waveform Case Outline and Dimensions -- SMD-1 All dimensions in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96 To Order |
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